W25P16VSFIG-TR Datasheet, PDF (37/43 Pages) Winbond – 8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY

W25P80 / W25P16 / W25P32
AC Electrical Characteristics, continued
DESCRIPTION
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic
Signature Read
Write Status Register Cycle Time
Page Program Cycle Time ⁽⁵⁾
3.0V-3.6V VCC
2.7V-3.6V VCC
Sector Erase Cycle Time
Chip Erase Cycle Time W25P80
Chip Erase Cycle Time W25P16
Chip Erase Cycle Time W25P32
Parameter Page Erase Cycle Time
SYMBOL
tHHCH
tCHHL
tHHQX⁽²⁾
tHLQZ⁽²⁾
tWHSL⁽⁴⁾
tSHWL⁽⁴⁾
tDP⁽²⁾
ALT
tLZ
tHZ
SPEC
MIN TYP MAX
5
5
9
9
20
100
3
UNIT
ns
ns
ns
ns
ns
ns
µs
tRES1⁽²⁾
30 µs
tRES2⁽²⁾
tW
30 µs
17 30 ms
tPP
3.5 7
ms
4
8
ms
tSE
0.6 1.5
s
7 20
s
tCE
12 40
s
25 80
s
tPE
100 200 ms
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set at 1.
5. Maximum Tpp uses worse-case user pattern at 85°C.
Publication Release Date: December 11, 2005
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Revision J