W25X64BV Datasheet, PDF (36/43 Pages) Winbond – 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X64BV
11.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
SPEC
TYP
MAX
UNIT
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX⁽²⁾
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ⁽²⁾
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
ns
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
ns
/CS High to Power-down Mode
tDP⁽²⁾
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
3
µs
/CS High to Standby Mode with Electronic
Signature Read
tRES2⁽²⁾
1.8
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) ⁽⁴⁾
t _BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t _BP2
Page Program Time
tPP
20
50
µs
2.5
12
µs
0.7
3
ms
Sector Erase Time (4KB)
tSE
30
200
ms
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
tBE ₁
120
800
ms
tBE ₂
150 1,000 ms
tCE
15
30
s
Notes:
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP is set to 1.
For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where
N = number of bytes programmed.
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