W25X10L Datasheet, PDF (36/46 Pages) Winbond – 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI

W25X10L, W25X20L, W25X40L, W25X80L
10.8 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL ALT
MIN
Write Protect Setup Time Before /CS Low
tWHSL⁽³⁾
20
Write Protect Hold Time After /CS High
tSHWL⁽³⁾
100
/CS High to Power-down Mode
tDP⁽²⁾
/CS High to Standby Mode without Electronic
Signature Read
tRES1⁽²⁾
/CS High to Standby Mode with Electronic
Signature Read
tRES2⁽²⁾
Write Status Register Time
tW
Byte Program Time (First Byte) ⁽⁴⁾
t_BP1
Additional Byte Program Time (After First Byte) ⁽⁴⁾
t_BP2
Page Program Time
tPP
Sector Erase Time (4KB)
tSE
Block Erase Time (64KB)
tBE
Chip Erase Time W25X10L / W25X20L
tCE
Chip Erase Time W25X40L
Chip Erase Time W25X80L
SPEC
TYP
MAX
3
3
1.8
5
15
100
150
6
12
1.5
5
170
300
1
2
4
6
6
10
12
20
UNIT
ns
ns
µs
µs
µs
ms
µs
µs
ms
ms
s
s
s
s
Notes:
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where N
= number of bytes programmed. The program address for the 25X L-Series must start on a page boundary (A7-A0 =
00h). tBP1 (typical) is also the recommended delay time before reading the status register after issuing a program
page instruction.
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Publication Release Date: February 27, 2008
Revision I