W9425G6EH_0812 Datasheet, PDF (25/54 Pages) Winbond – 4 M × 4 BANKS × 16 BITS DDR SDRAM

W9425G6EH
9.3 Capacitance
(VDD = VDDQ = 2.5V ±0.2V, f = 1 MHz, TA = 25 °C, VOUT (DC) = VDDQ/2, VOUT (Peak to Peak) = 0.2V)
SYMBOL
PARAMETER
MIN.
MAX.
CIN
Input Capacitance (except for CLK pins)
2.0
3.0
CCLK Input Capacitance (CLK pins)
2.0
3.0
CI/O
DQ, DQS, DM Capacitance
4.0
5.0
CNC
NC Pin Capacitance
-
1.5
Notes: These parameters are periodically sampled and not 100% tested.
The NC pins have additional capacitance for adjustment of the adjacent pin capacitance.
DELTA
(MAX.)
0.5
0.25
0.5
-
UNIT
pF
pF
pF
pF
9.4 Leakage and Output Buffer Characteristics
SYMBOL
PARAMETER
II (L)
IO (L)
VOH
VOL
IOH
IOL
Input Leakage Current
Any input 0V < VIN < VDD, VREF Pin 0V < VIN <
1.35V (All other pins not under test = 0V)
Output Leakage Current
(Output disabled, 0V < VOUT < VDDQ)
Output High Voltage
(under AC test load condition)
Output Low Voltage
(under AC test load condition)
Output Levels: Full drive option
High Current
(VOUT = VDDQ - 0.373V, min. VREF, min. VTT
Low Current
(VOUT = 0.373V, max. VREF, max. VTT)
IOHR
Output Levels: Reduced drive option - 60%
High Current
(VOUT = VDDQ - 0.763V, min. VREF, min. VTT
IOLR
IOHR₍₃₀₎
IOLR₍₃₀₎
Low Current
(VOUT = 0.763V, max. VREF, max. VTT)
Output Levels: Reduced drive option - 30%
High Current
(VOUT = VDDQ – 1.056V, min. VREF, min. VTT
Low Current
(VOUT = 1.056V, max. VREF, max. VTT)
MIN.
-2
-5
VTT +0.76
-
-15
15
-9
9
-4.5
4.5
MAX.
2
5
-
VTT -0.76
-
-
-
-
-
-
UNIT
µA
µA
V
V
mA
mA
mA
mA
mA
mA
NOTES
4, 6
4, 6
5
5
5
5
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Publication Release Date:Dec. 03, 2008
Revision A08