W29EE011 Datasheet, PDF (20/20 Pages) Winbond – 128K X 8 CMOS FLASH MEMORY

W29EE011
VERSION HISTORY
VERSION
A9
A10
A11
A12
DATE
Feb. 1998
Jun. 1998
Aug. 1998
Jul. 1999
PAGE
DESCRIPTION
6
Add pause 10 mS
7
Add pause 50 mS
8
Correct the time 10 mS to 10 µS
1, 17
Add cycing 100 item
1, 10, 11, 12, 17 Add 70 nS bining
1, 2, 17, 19 Add TSOP package
1, 17
Change endurance cycles as 1K/10K
1, 11, 12, 17 Delete 70,120 nS bining
1, 17, 18
Delete SOP package
Headquarters
Winbond Electronics (H.K.) Ltd.
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: [phone]
FAX: [phone]
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: [phone]
FAX: [phone]
Note: All data and specifications are subject to change without notice.
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