W29EE011 Datasheet, PDF (1/20 Pages) Winbond – 128K X 8 CMOS FLASH MEMORY

W29EE011
128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W29EE011 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
• Single 5-volt program and erase operations
• Fast page-write operations
− 128 bytes per page
− Page program cycle: 10 mS (max.)
− Effective byte-program cycle time: 39 µS
− Optional software-protected data write
• Fast chip-erase operation: 50 mS
• Read access time: 90/150 nS
• Page program/erase cycles: 1K/10K
• Ten-year data retention
• Software and hardware data protection
• Low power consumption
− Active current: 25 mA (typ.)
− Standby current: 20 µA (typ.)
• Automatic program timing with internal VPP
generation
• End of program detection
− Toggle bit
− Data polling
• Latched address and data
• TTL compatible I/O
• JEDEC standard byte-wide pinouts
• Available packages: 32-pin 600 mil DIP,
TSOP, and PLCC
Publication Release Date: July 1999
-1-
Revision A12