W9864G2GH Datasheet, PDF (15/46 Pages) Winbond – 512K X 4 BANKS X 32BITS SDRAM

W9864G2GH
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
Input, Column Output Voltage
Power Supply Voltage
Operating Temperature
Operating Temperature (-6I)
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
SYMBOL
VIN, VOUT
VCC, VCCQ
TOPR
TOPR
TSTG
TSOLDER
PD
IOUT
RATING
-0.3~VCC+ 0.3V
-0.3~4.6V
0 ~ 70
-40 ~ 85
-55 ~ 150
260
1
50
UNIT
V
V
°C
°C
°C
°C
W
mA
NOTES
1
1
1
1
1
1
1
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
9.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -5/-6/-6C/-7, TA = -40 to 85°C for -6I )
PARAMETER
SYM. MIN. TYP.
MAX. UNIT NOTES
Power Supply Voltage
VCC 3.0
3.3
3.6
V
Power Supply Voltage (for I/O Buffer)
VCCQ 3.0
3.3
3.6
V
Power Supply Voltage(-7)
Power Supply Voltage
(for I/O Buffer)(-7)
Input High Voltage
Input Low Voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
VCC 2.7
3.3
3.6
V
VCCQ 2.7
3.3
3.6
V
VIH
2
- VCC +0.3 V
1
VIL -0.3
-
+0.8
V
2
VOH 2.4V
-
-
V
IOH= -2mA
VOL
-
-
0.4
V
IOL= 2mA
II(L) -10
-
10
µA
3
Io(L) -10
-
10
µA
4
Note: 1. VIH (max.) = VCC/VCCQ+1.2V for pulse width < 5 nS
2. VIL (min.) = VSS/VSSQ-1.2V for pulse width < 5 nS
3. Any input 0V<VIN<VCCQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Output disabled, 0V ≤ VOUT ≤ VCCQ.
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Publication Release Date:Aug. 13, 2007
Revision A09