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W9816G6JH Datasheet, PDF (15/42 Pages) Winbond – 512K X 2 BANKS X 16 BITS SDRAM
W9816G6JH
9.5 AC Characteristics
(VDD = 3.3V ± 0.3V for -5/-6/-6I, VDD = 2.7V to 3.6V for -7/-7I, TA = 0 to 70°C for -5/-6/-7, TA= -40 to 85°C for -6I//-7I)
PARAMETER
-5
SYM.
MIN. MAX.
-6/-6I
MIN. MAX.
-7/-7I
MIN. MAX.
UNIT NOTES
Ref/Active to Ref/Active Command Period tRC
Active to Precharge Command Period
tRAS
Active to Read/Write Command Delay
Time
tRCD
55
60
40 100000 42
15
18
65
100000 45 100000 nS
20
Read/Write(a) to Read/Write(b)Command
Period
tCCD
1
1
1
tCK
Precharge to Active(b) Command Period tRP 15
18
Active(a) to Active(b) Command Period tRRD 10
12
18
nS
14
CL* = 2
2
2
Write Recovery Time
tWR
CL* = 3
2
2
2
tCK
2
CLK Cycle Time
CL* = 2
7 1000 8
tCK
CL* = 3
5 1000 6
1000 10 1000
1000 7 1000
CLK High Level Width
tCH
2
2
2
8
CLK Low Level Width
tCL
2
2
2
8
CL* = 2
6
5.5
5.5
Access Time from CLK
tAC
9
CL* = 3
4.5
5
5
Output Data Hold Time
tOH
2
2
2
9
Output Data High
Impedance Time
CL* = 2
6
5.5
5.5
tHZ
7
CL* = 3
4.5
5
5
Output Data Low Impedance Time
tLZ
0
0
0
nS
9
Power Down Mode Entry Time
tSB
0
5
0
6
0
7
Data-in-Set-up Time
Data-in Hold Time
Address Set-up Time
tDS 1.5
1.5
1.5
8
tDH 0.7
0.7
1
8
tAS 1.5
1.5
1.5
8
Address Hold Time
tAH 0.7
0.7
1
8
CKE Set-up Time
tCKS 1.5
1.5
1.5
8
CKE Hold Time
tCKH 0.7
0.7
1
8
Command Set-up Time
tCMS 1.5
1.5
1.5
8
Command Hold Time
tCMH 0.7
0.7
1
8
Refresh Time (2K Refresh Cycles)
tREF
32
32
32 mS
Mode Register Set Cycle Time
tRSC
2
2
2
tCK
Exit self refresh to ACTIVE command
tXSR 70
72
75
nS
* CL = CAS Latency
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Publication Release Date: Jun. 24, 2014
Revision: A01