W39L040A Datasheet, PDF (14/26 Pages) Winbond – 512K × 8 CMOS FLASH MEMORY

W39L040A
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
PARAMETER
Operating Temperature
Storage Temperature
Power Supply Voltage to VSS Potential
Voltage on Any Pin to Ground Potential except A9
Voltage on A9, #OE Pin to Ground Potential
RATING
0 to +70
-65 to +150
-0.5 to VDD+0.5
-0.5 to +4.0
-0.5 to +12.5
UNIT
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability
of the device.
7.2 DC Operating Characteristics
(VDD = 3.0 ~ 3.6V for 70 nS or VDD = 2.7 ~ 3.6V for 90 nS, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Power Supply Read
Current
Power Supply Write
Current
IDD1
#CE = VIL, #OE = VIH, at f = 5
MHz
IDD2 #CE = VIL, #OE = VIH
MIN.
-
-
LIMITS
TYP.
7
15
MAX.
12
30
Standby VDD Current ISB #CE = VDD ± 0.3V
-
0.2
5
UNIT
mA
mA
μA
Input Leakage
Current
ILI VIN = VSS to VDD, VDD = VDD max.
-
-
±1
μA
Output Leakage
Current
ILO
VOUT = VSS to VDD, VDD = VDD
max.
-
-
±1
μA
Input Low Voltage
VIL
-
-0.5
-
0.8
V
Input High Voltage VIH
-
0.7 x VDD - VDD +0.3 V
Output Low Voltage VOL IOL = 4.0 mA, VDD = VDD min.
-
-
0.45
V
VOH1 IOH = -2.0 mA, VDD = VDD min.
0.85 VDD -
-
V
Output High Voltage
VOH2 IOH = -100 μA, VDD = VDD min.
VDD -0.4 -
-
V
7.3 Pin Capacitance
(VDD = 3.3V for 70 nS, or VDD = 3.0V for 90 nS, TA = 25° C, f = 1 MHz)
PARAMETER
SYMBOL
CONDITIONS
Input Capacitance
CIN
VIN = 0V
Output Capacitance
COUT
VOUT = 0V
TYP.
6
8.5
MAX.
7.5
12
UNIT
pF
pF
- 14 -