FFM301L Datasheet, PDF (4/4 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere

WILLAS
.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER _SROEDC6-T10I2F3I_&E₊R_{ /}SP-A_P2C0_AVK_C-A_K2G0_AE0GV_E
FFFFM_FMTP^FM_Hb^M_FR00_1Tr¹_e1_U72He²LL_0RP⁰⁰_rU^-_o-MdMu⁺_c+t
Pac_Fk_ei_an_tg_urin_esformation
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
P0
• Low power loss, high efficiency.
P1
• High current capability, low fo_drward voltage drop.
• High surge capability.
• G_Euardring for overvoltage protection.
• Ultra high-speed switching.
•FSilicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
B
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL9^A4-V0 rated flame retardant
P
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
W
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
D2
D1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
C
For capacitive load, derate current by 20%
RATINGS
W1
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH^DFM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS
14
21
VDC
20
30
28
35
40
50
42
56
70
unit:mm
60
80
100
105
140 ^Volts
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
Item
Peak Forward Surge Current 8.3 ms single half sine-wave _IFSM
superimposed on rated load (JEDEC method)
Carrier width
Typical Thermal Resistance (Note 2)
Carrier length
Typical Junction Capacitance (Note 1_C)_{arrier depth}
RΘJA
CJ
Operating Temperature Range
Sprocket hole
TJ
Storage Temperature Range
13" Reel outside dia^Tm^STe^Gter
Symbol Tolerance
A
0.1
B
0.1
C_{-55 to +125} 0.1
d
0.1
D
2.0
1.0
SMC
30
5.10
40
7.20
120
2.50
1.50
-₃6₃5_0.t₀o₀+175
-55 to +150
Amps
Amps
℃/W
PF
℃
℃
13" Reel inner diameter
D1
min
50.00
CHARACTERIST₇I_"C_RS_{eel outside dia}S_mY_eM_tB_eO_r L FM120-MH_DFM130-MH FM₂1_.4₀0-MH FM150-MH FM₁1₇60₈-_.M₀H₀ FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A D₇C_{" Reel inner diamete}V_rF
D1
0.50_min
0.70 _62.00
0.85
0.9
0.92 Volts
Maximum Average Reverse Current Faet e@d hToAl=e2d5i℃ameter _IR
Rated DC Blocking Voltage
Spro@ckTeAt=h1o2l5e℃position
D2
0.5
E
0.1
130.0.50
11.705
mAmps
Punch hole position
NOTES:
Punch hole pitch
1- Measured at 1 MHZ and applied reve_Srs_pe_rovo_cl_kta_eg_te_ho_of_le4._p0_iV_tcD_hC.
F
0.1
P
0.1
P0
0.1
5.50
8.00
4.00
2- Thermal Resistance From Junction toEAmmbboiesnstment center
P1
0.1
2.00
Overall tape thickness
T
0.1
0.23
Tape width
W
0.3
12.00
Reel width
W1
1.0
18.00
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.