FFM301L Datasheet, PDF (2/4 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere

WILLAS
3.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER _SROEDCS-T1MI2F3I_CE₊R_-S_LP-AP2C0_AVK_C-A_K2G0_AE0GV _E
FFFF_FMM_TP^FM_bH3^M_3FR0_1T0r¹_e1_U2H7e²L_0LRP⁰⁰_rU^-_o-MdMu⁺_c+t
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Rating and characteristic curves
SOD-123H
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High su_Fr_Ig_Ge_.1c_-a_Tp_Ya_Pb_ICili_Aty_L. _FORWARD
• Guardring for overvoltage protection.
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
• Ultra high-spee^Cd ^Hsw^ARitc^Ah^Ci^Tn^Eg.^RISTICS
• Silicon epitaxial planar chip, metal silicon junction.
3.6
• Lead-free parts meet environmental standards of
50
MIL-STD-19500 /228
3.0
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
Ha₁lo₀gen free product for packing code suffix "H"
2.4
Mechanical data
1.8
• Ep₃o_.0xy : UL94-V0 rated flame retardant
P.C.B. Mounted on
1.2
0.32" x 0.32" (8 mm x 8 mm)
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
0.6
•
Te¹r^.m⁰ i n a l s
:Plated
terminals,
solderable
per
,
MIL-STD-750
0
Copper Pad Areas
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
0
20 40
60 80 100 120 140 160 180 200
• Polarity : Indicated by cathode baTJn=2d5 C
Pulse Width 300us
• Mounting Position : Any
0.1
1% Duty Cycle
• Weight : Approximated 0.011 gram
LEADDiTmEeMnsPioEnsRiAnTinUchReEs a(°nCd )(millimeters)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
Ratings at 25℃ ambient temperature unless otherwise specified.
.01
Single phase ha.6lf wav.8e, 601H.0z, r1e.s2istiv1e.4of in1d.6ucti1v.e8 loa2d.0.
80
For capacitive load, derate^FOc^Ru^Wrr^Ae^Rn^Dt b^Vy^O2^LT0^A%^GE,(V)
FIG.3-
TES^RT^AC^TI^IR^NC^GU^SIT
DIAGRAM
AND
R^SE^YV^ME^BR^OS^LE^FM120-MH
FM13₆₀0-MH
FM140-MH
FM150-MH
FM160-MH^TJ=F²M^{5 C}180-MH
8.3ms Single Half
FM1100-MH FM1150-MH
Sine Wave
FM1200-MH
UNIT
Marking Code
12
13
14
15
16
Maximum Recurrent^RP^Ee^Cak^OR^Ve^Ev^Rer^Yse^TIV^Mo^Elta^Cge^HARACTERISV^TR^IR^CM^S
20
3₄0₀
40
50
60
50W
Maximum R^NM^OS^NINV^Do^UClt^Ta^IVg^Ee
10W
NONINDUCTIVE
VRMS
14
21
28
35
42
18
10
115 120
JEDEC method
80
100
150
200 Volts
56
70
105
140 ^Volts
Maximum DC Blocking Voltage
VDC
20
3200
40
50
60
80
100
150
200 ^Volts
Maximum Av₍e₊r₎age Forward Rectified Current
25Vdc
D.U.T.
Peak Forward^(aS^pu^prr^og^xe^.) Current 8.3 ms single half sine-wave
()
superimposed
on
rated
loa₁d_W (JEDEC
method)
OSCILLISCOPE
NON-
Typical Thermal ResistanINcDeUC(NTIVoEte 2) ^{(NOTE 1)}
IO _{( )}
PULSE
GENERATOR
(_IN_FO_ST_ME 2)
(+)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating T^Ne^Om^TEp^Se^: r¹a^{. R}tu^isr^ee^TimR^ea⁼n⁷ⁿg^se^{max., Input Impedance= 1 megohm.22pF.} TJ
Storage Tempera²tu^{. R}re^iseR^Tia^mn^e=g¹e^{0ns max., Source Impedance= 50 ohms.} TSTG
1.0
0
1
5
30¹⁰
50
100
NUMBER OF CYCLES AT 60Hz
40
120
-55 to +125 FIG.5-TYPICAL JUNCTION CAP-5A5CtIoTA+N15C0E
- 65 to +175
Amps
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A^trD^r C
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average R+e0v.5eArse Current at @| T A=25℃
|
IR
Rated DC Blocking Voltage
@^|| T A=125℃
|
NOTES:
0
|
|
|
1- Measured at 1 MHZ-0a.2n5dA applied reverse voltage of 4.0 VDC.
0.5
mAmps
10
2- Thermal Resistance From Junction to Ambient
-1.0A
2012-06
2012-1
1cm
SET TIME BASE FOR
50 / 10ns / cm
REVERSE VOLTAGE,(V)
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WILLAS ELECTRONIC CORP.