FFM301L Datasheet, PDF (1/4 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere

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3.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER _{SROEDCS-T1IM2F3IEC+}R_-S_LP-A2PC0AVK_C-A2_KG0AE0VGE
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THRU ^SOD-123H
ES2J-L _SMC-L
0.146(3.7)
0.130(3.3)
FFFF_FMM_TP^FM_bH^M33_FR1T00_r¹_e2H1_U7e²⁰L_RLP⁰⁰_rU^-_o-MdMu⁺_c+t
0.012(0.3) Typ.
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C_• a_Ts_ee_rm: M_ino_al_ld_se_:Pd _lp_al_ta_es_dti_tc_e,_rmD_iO_n-_a2_ls1_,4_sA_oB_ld/_eS_raM_bC_le/_per
,
MIL-STD-750
MCC
Maximum
Maximum DC
•_PaTe_rtr_Nm_uin_ma_bls_er: SoMlde_Rethr_eop_cd_ula_r2_rt_e0e_n2d_t6, solder_Mab_al_xe_imp_ue_mr
Blocking
0.272(6.9)
0.248(6.3)
2 Amp Super Fast
Recovery Rectifier
50 to 600
Volts


DO-214
AC
(SMA) (LEAD _{0.031(0.8) Typ.}


FRAME)
H


0.048(1.2) Typ.
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.189(4.8)
0.165(4.2)
0.040(1.0)
0.024(0.6)
0.0980(.20.351) (0.8) Typ.
0.075(1.9)
0.048 (1.2) Typ.
• Polarity : I^Mn^IdP^Lice^-Saa^Ttke^DRd^-eb⁷vy⁵e⁰crs^,ae^Mth^eo^td^hRe^oM^dbSa²n⁰Vd²o⁶ltage
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P_E•o_SMl₂a_oAr_ui_-t_nLy_t:_inIn_gd_Pic_oa_st_ie_t^V_id_o5on0b^ltVy^a_{: A}^gc^e_na_ythode
band
35V
• M_{E• S}o_Wu_2eBn_it_-gi_Ln_hg_{t :}P_Ao_ps_pit_ri_oo_xn_1im0: A_0aVn_tey_{d 0.011 gra7m0V}
Voltage
50V
100V
Dimensions in inches and (millimeters)
J
Dimensions in inches and (millimeters)
• WESe2igDh-tL: Approxim2a0t0eVd 0.19 gram 140V
200V
ES2G-L _MAXIMU40_M0V_RATINGS 2_A8_N0V_{D ELECTR}4_I0_C0_AV_{L CHARACTERISTICS}
RSian_Etg_lin_elegcMs_tp^E_rhai^S_aact²_s2ax^J_e5l^-_i℃_C^L_{hmahlafaurwmamabcvit}ee_en,_rrt6_ait⁶_0se⁰_Htm_i⁰_izcp^V_n,ser_ger@ast_{siu2srt5ieav°euCn}no_Ul_dfenisn⁴_ls_Ede²_uos⁰_lct^V_sh_etieOvcre_tw_htlioes_raeridwcs.p_iase_ec_li⁶_Sfi_C⁰e_p⁰d_eh.^V_{caifireadcteristics (EAT T}
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T_L= 110к _CONDITIONS
F
G
A⁼
2
A
5oC
D
Sy
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mbol
s
s
o
B
M
the
IN.
r
w
C
ise
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P.
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MA
X
.
UNIT
Peak^FF^oo^rwrw^aa^rr^dd^rS^ecuR^trⁱgA^fieT^eI^dN^cG^uS^rI^r_F^e_Sⁿ_M^t
50A^{See F}S8ⁱY^g.3M^.m²BOs,LhFaMlf1s2i0n-MeH FM130-MH FM140-MH FM150-DMIMHENFSIMON1S60^I-^OMH FM180-MH FM1100-MH F³M^.01150-MH^AFM1200-MH _UNIT
MMaarxkimi^CMIn_nug^uas_m^rC_txraieo_FRmndⁿ_oetue_{atcrmnwurearoernudtssPueragkeRceuvrerresentVoltage}
8.3ms single hal1f 2sine-wa1v3e super1i^I4m^NCHp^Eo^S sed15on
DIM
MIN
MAX
rate lo_Va_Rd_R(_MJEDEC₂₀method₃e₀) _{A 40.079}
5^.00⁹⁶
B
.050
.064
16_I 18 ^MM
MIN FSM MAX
NOTE
2.00₆₀
2.44 ₈₀
1.27
1.63
10
100
100¹¹⁵ A ¹²⁰
150
200
MaximFuomrwRaMrdSVVoollttaage
Maximu^Em^SRD²C^Aev-B^Lel^-o^rEsc^Sk^ei²n^cDg^u-V^rLro^eltⁿa^tge ^VF
ES2G-L
V_R = _VV_RRRMMS T_J = ₁2₄5^OC
21
C
D
28.002
---
1.9.2^55VVV^{R = IVFVMRDR=CM 2T.0J A=;T21J0=2255OCoC 30}
E
.030
F 40.065
G
.189
35 .008
.02
.060
5.0091
.220
.05
42 _---
I _{.76 R}
1.6560
4.80
56 ^.20
.51
1.52
2.32 80
5.59
70
5.0105
140
μA
100 ³⁰⁰150
200
Maximum
D_Avio_erd_ae_gej_Eu_FSn_o2c_rJt_wi_-o_aLrn_dc_Ra_ep_ca_tifc_ieit_da_Cnc_ue_rrent
1.70^fV^=1MHzIOand
applied
4V
DC
revHerse .1v5o7 ltage.181
J
.090
.115
C 4.00
1.0 _2.25
J 4.60
2.92
60
pF
Storag_Ee_St₂e_Jm_-Lperature
.975V(Typ) IFM = 2.0A;TJ=150^oC
Peak Forward Surge Current 8.3 ms single half1s.i2n5eV-w(Maavxe) _IFSM
super^Mim^apo^xs^imed^uo^mn r^Da^Cted load (JEDEC method)
TTyyppiicc^RRV_aalloea^STJ_lvttuhe^Y_aenedgr^M_cr^semt_Di^eB_oaCn^OCl RC_B^Luea^rS_lorsp^ecias^nk_ct^ta_iintn^A_agcn^tVec_(Ve^R(^RN₎₍^M_No^*1toete2^I)1^R₎^V(VRM₎^S*2
5µA_V
*
R
3
1mA(V)
TT^RAA_C^Θ==_JJ(^AV21V^50F)*^к0⁴к
*5
t_rr
(ns)
SUGGESTED SOL^TD^SE^TGR
-65
PAD LAYOUT ³⁰
+175 ^OC
Operating
0.090”
temperature
T_J, (^OC)
40
120
*1 Repetitive peak reverse voltage
OperaMtiangx^FimT^Feu^Mmmp³e⁰Rr¹ae^/tvuerersRean⁵g⁰e T_rr ³⁵ 35n⁵s⁰ I_F=T0J.5A, I_R=1.0A,^{-55 to +125}
0.085”
-55 to +150
Volts
Volts
Volts
Amps
Amps
℃/W
PF
℃
Stora^Rge^eT^coFem^vFep^Mre^y3ra^T0t²ⁱu^mr^/e^eRang1e00
70
Typi_Fc_Fal_MJ₃u₀nc₃t_/ion ₂₀₀
Capacitance
C_J140
FFM304/^CHAR4^A0^C0^TERISTI2^C8^S0
100
15p₂F₀₀
400
I_TrrS=_T0_G.25A
Measured at ¹⁵⁰
- 6^*25 t^Ro ^M+1^S75^voltage
℃
S¹Y^.0M^MB₁O^H_.3L^z₀^,F^VM^R1⁼20⁴-^.M⁰H^VFM130-M_-H₅F₅M1_to40-₊M₁H₅F₀M150-MH
*3 Continuous reverse voltage
FM160-MH₀F_.0M₇₀1_”80-MH FM1100-MH FM1150-MH
FM1200-MH
UNIT
Max^Nim^otu^esm^: _F¹F^._For^H_Mw^ig₃a^hr₀^Td₅^eV^m_/o^pelt^ra^ag^tue^r₆^ea₀^St^o₀1^ld.^e0^rA^ExD^emC₄^pt₂^io₀ⁿ
Applied, see EU
600
Dir_Vec_Ftive
Annex
Notes
2
7.
50
0.50
0.70 ^{*4 Maximum}0.^f8^o5^{rward voltag}0^e.9^@IF^=3.00^A.92 Volts
Maximum_FA_Fve_Mra₃g₀e₆R_/ evers₈e₀C₀urrent
at
5
@T
60
A=25℃
800
IR
*5^0.M⁵ aximum Reverse recovery time, note 1 mAmps
Rated DC Blocking Voltage
@T A=125℃
500
10
FFM307/ 1000 700
1000
NOTES: _{Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A}
www.mccsemi.com ^{1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.}
2- The^Rrm^eal ^eRe^lsi^psta^anc^ce ^kFroⁱmⁿJ^gunction to Ambient
Rev_Pi_As_Ci_Ko_An_G: _ED
REEL SIZE
REEL
(pcs)
COMPONENT
SPACING
(m/m)
B1OoXf 3
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
20_CA1_R2_T/0_O5_N/25
APPROX.
GROSS WEIGHT
(pcs)
(kg)
SMC/
13"
3,000
8.0
6,000 337*337*37 330
350*330*360 48,000
17.2
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.