FFM301L Datasheet, PDF (3/4 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Ampere

WILLAS
.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER _{SROEDC6-T1I02F3IE&+}R_S_/P-A2PC0AVK_C-A2_KG0AE0VGE
FFFF_FMM_TP^FM_bH^M_FR1T00_r¹_e2H1_U7e²⁰L_RLP⁰⁰_rU^-_o-MdMu⁺_c+t
Pi^Fn^en^ain^tug^rein^sformation
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile^Psuⁱrⁿface mounted application in orde^Sr tⁱo^{mplified outline}
SOD-123H
Symbol
optimize board space.
• Low power loss, high efficiency.
• Hi^Pghⁱⁿcu¹rrent^cc^aap^ta^hb^oili^dty^e, low forward voltage drop.
• HiPghinsu2rge caapnaobidlitey.
1
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2
1
2
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Ma_Hr_ak_loi_gn_eng_{free product for packing code suffix "H"}
Mechanical data
Type number
Marking code
• Epoxy : UL94-V0 rated flame retardant
• Case : M^Fo^Flde^Md ³pl⁰as¹ti^/c, SOD-123H
F31
• Termina^Fls^F:P^Mlat³ed⁰t²er^/minals, solderable per MIL-STD-75^F0,³²
FF_MM_et3_ho0_d3₂/₀₂₆
F33
• Polarity^F: I^Fnd^Mica³te⁰d⁴b^/y cathode band
F34
• Mountin^Fg ^FPo^Msit³io⁰n ⁵: A^/ny
•
Weight
FFM306/
:_FA_Fpp_Mrox₃im₀a₇te_/d
0.011
gram
F35
F36
F37
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Suggested solder pad layout
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRMS
14
21
28
35
42
C
VDC
20
30
40
50
60
56
70
105
140 ^Volts
80
100
150
200 ^Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-waAve
superimposed on rated load (JEDEC method)
IFSM
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ B
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
Dimensions in inches and (millimeters)
IR
0.5
Rated DC Blocking Voltage
@T A=125℃
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
PACKAGE
SMC/
A
0.189 (4.80)
B
0.063 (1.60)
C
0.158 (4.00)
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.