BC857XTT1 Datasheet, PDF (4/8 Pages) WILLAS ELECTRONIC CORP – PNP Silicon General Purpose Transistors

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10
C_ib
7.0
T_A = 25°C
5.0
3.0
C_ob
2.0
1.0
−0.4 −0.6
−1.0 −2.0 −4.0 −6.0 −10
V_R, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
−20 −30 −40
400
300
200
150
V_CE = −10 V
T_A = 25°C
100
80
60
40
30
20
−0.5
−1.0 −2.0 −3.0 −5.0
−10 −20 −30 −50
I_C, COLLECTOR CURRENT (mAdc)
Figure 6. Current−Gain − Bandwidth Product
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 ^0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
t, TIME (s)
Figure 7. Thermal Response
−200
1s
3 ms
−100
−50
T_A = 25°C TJ = 25°C
BC558
−10
BC557
BC556
−5.0
−2.0
−1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0 −10
−30 −45 −65 −100
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 8. Active Region Safe Operating Area
The safe operating area curves indicate I_C−V_CE limits
of the transistor that must be observed for reliable opera-
tion. Collector load lines for specific circuits must fall be-
low the limits indicated by the applicable curve.
The data of Figure 8 is based upon T_J(pk) = 150°C; T_C or
T_A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T_J(pk) ≤ 150°C. T_J(pk)
may be calculated from the data in Figure 7. At high case
or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
2015.02
www.willas.com.tw
Rev.L0Ï­
P4