BC857XTT1 Datasheet, PDF (2/8 Pages) WILLAS ELECTRONIC CORP – PNP Silicon General Purpose Transistors

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ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mA)
BC857 Series
Collector −Emitter Breakdown Voltage
(I_C = −10 mA, V_EB = 0)
Collector −Base Breakdown Voltage
(I_C = −10 mA)
Emitter −Base Breakdown Voltage
(I_E = −1.0 mA)
BC857B Only
BC857 Series
BC857 Series
Collector Cutoff Current (V_CB = −30 V)
Collector Cutoff Current (V_CB = −30 V, T_A = 150°C)
ON CHARACTERISTICS
DC Current Gain
(I_C = −10 mA, V_CE = −5.0 V)
(I_C = −2.0 mA, V_CE = −5.0 V)
BC857A
BC857B
BC857C
BC857A
BC857B
BC857C
Collector −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter On Voltage
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −10 mA, V_CE = −5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = −10 mA, V_CE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = −10 V, f = 1.0 MHz)
Noise Figure
(I_C = −0.2 mA, V_CE = −5.0 Vdc, R_S = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
Symbol
V_(BR)CEO
V_(BR)CES
V_(BR)CBO
V_(BR)EBO
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
f_T
C_ob
NF
Min
−45
−50
−50
−5.0
−
−
−
−
−
125
220
420
−
−
−
−
−0.6
−
100
−
−
Typ
Max
Unit
V
−
−
V
−
−
V
−
−
V
−
−
−
−15
nA
−
−4.0
mA
90
−
−
150
−
270
−
180
250
290
475
520
800
V
−
−0.3
−
−0.65
V
−0.7
−
−0.9
−
V
−
−0.75
−
−0.82
−
−
MHz
−
4.5
pF
−
10
dB
2015.02
www.willas.com.tw
Rev.L0Ï­
P2