BC857XTT1 Datasheet, PDF (1/8 Pages) WILLAS ELECTRONIC CORP – PNP Silicon General Purpose Transistors

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PRIMARY CHARACTERISTICS
P_D
200mW
V_CEO
-45V
I_C
-100mAdc
h_FE
125~800
T_J,Max
150℃
FEATURES
 These transistors are designed for
general purpose amplifier
applications. They are housed in the
SC−89 package which is designed for
low power surface mount
applications.
 Pb−Free Packages are Available
 Moisture Sensitivity Level 1
ϴϱϳdžddϭ
SC-89
Marking Code :
Ex : BC857BTT1
PACKAGE
3F
3F = Device Code
ORDERING INFORMATION
Device
BC857ATT1
BC857BTT1
BC857CTT1
Marking
3E
3F
3G
1
B ASE
3
COLLECT OR
2
EMIT T ER
MECHANICAL DATA
 Case：Molded plastic,SC-89
 Polarity：As Above Marked
 Terminals :Plated terminals,
solderable per MIL-STD-750,Method
2026
 Epoxy : UL94-V0 rated flame
retardant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
2015.02
Symbol
V_CEO
V_CBO
V_EBO
I_C
Max
−45
−50
−5.0
−100
Unit
V
V
V
mAdc
Symbol
P_D
R_qJA
Max Unit
200
mW
1.6 mW/°C
600 °C/W
P_D
R_qJA
300
mW
2.4 mW/°C
400 °C/W
T_J, T_stg −55 to
°C
+150
www.willas.com.tw
Rev.L0Ï­
P1