BC857XTT1 Datasheet, PDF (3/8 Pages) WILLAS ELECTRONIC CORP – PNP Silicon General Purpose Transistors

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2.0
1.5 VCE = −10 V
T_A = 25°C
1.0
0.7
0.5
0.3
0.2
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
I_C, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
−1.0
−0.9 T_A = 25°C
−0.8
V_BE(sat) @ I_C/I_B = 10
−0.7
−0.6
V_BE(on) @ V_CE = −10 V
−0.5
−0.4
−0.3
−0.2
−0.1
V_CE(sat) @ I_C/I_B = 10
0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
I_C, COLLECTOR CURRENT (mAdc)
−50 −100
Figure 2. “Saturation” and “On” Voltages
−2.0
T_A = 25°C
−1.6
−1.2
−0.8
I_C =
−10 mA
−0.4
I_C = −50 mA
I_C = −20 mA
I_C = −200 mA
I_C = −100 mA
0
−0.02
−0.1
−1.0
I_B, BASE CURRENT (mA)
−10 −20
Figure 3. Collector Saturation Region
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.2
−1.0
−10
−100
I_C, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
2015.02
www.willas.com.tw
Rev.L0Ï­
P3