English
Language : 

8050XLT1 Datasheet, PDF (4/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors
WILLAS
1G.0AeSUnReFArCaE MlOPUNuT rSCpHoOTsTKeY BTARrRaIEnR sREiCsTItFoIERrSs-20V- 200V
SOD-123+ PACKAGE
FM120-M+
8050xLT1 THRU
FM1200-M
Pb Free Produc
Feat
• Batch
ures
process
des
ign
,
excell
ent
po
wer
dis
sSipOatTio-n 2of3fers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward.1v2ol2ta(g3e.1d0ro)p.
• High surge capability.
.106(2.70)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated.t0e8rm0(in2a.l0s4, s)olderable per MIL-STD-750
Metho.d027002(61.78)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
.008(0.20) 0.031(0.8) Typ.
0.031(0.8) Typ.
.003(0.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃.0a0m4b(ie0n.t1te0m)MpeAraXtu.re unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
Maximum Recurrent Peak Reverse Voltage .020(0.V5R0RM)
20
30
40
50
60
Maximum RMS Voltage
.012(0.V3R0M)S 14
21
28
35
42
18
10
115 120
80
100
150
200
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1.0
Dimensions in inches and (millimeters)
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.037
0.95
RΘJA
CJ
TJ
TSTG
-55 to +1205.037
0.95
40
120
- 65 to +175
-55 to +150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.5
0.079
10
2.0
NOTES:
1- Measured at 1 MHZ and applied reverse vol0ta.g0e35of 4.0 VDC.
2- Thermal Resistance From Junction to Ambien0t.9
0.031
0.8
inches
mm
2012-2012-06
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.