8050XLT1 Datasheet, PDF (2/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
1^G.0A^eSUⁿR^eFA^rC^aE M^l O^PUN^uT^rS^pCH^oOT^sTK^eY B^TAR^rR^aIEⁿR^sREⁱC^sTI^tF^oIER^rS^s-20V- 200V
SOD-123+ PACKAGE
FM120-M+
8050xLT1 ^THRU
FM1200-M
Pb Free Produc
Features
Package outline
• Batch process design, excellent power dissipation offers
ELE^bC^eT^ttR^erIC^reA^vL^erC^seH^lA^eR^akA^aC^gT^eE^cR^urI^rS^eTⁿI^tC^aS^nd(T^t_A^h=^e2^r5^m°^aC^{l r}u^en^slⁱe^ss^tasⁿo^ct^eh^.erwise noted)
• Low profile surface mounted application in order to
SOD-123H
C^oph^ta^imra^izc^ete^br^ois^at^ri^dc^space.
Symbol
Min
Typ
• Low power loss, high efficiency.
OF_•F_HC_igH_hA_cuR_rA_reC_nT_t E_caR_pIS_aT_bI_iC_litS_{y, low forward voltage drop.}
Max
0.146(3.7)
0.130(3.3)
Unit
•_CH_oi_lg_leh_cs_tou_rr_-Ege_mc_itta_ep_ra_Bb_reil_ait_ky_d. _{own Voltage}
• Guardring for overvoltage protection.
V(BR)CEO
25
–
• (UICl=tr1a.0hmigAh)-speed switching.
–
V
• Silicon epitaxial planar chip, metal silicon junction.
•^EL^meⁱa^ttd^e-^rf^-r^Be^ae^sepa^Br^rt^es^am^kde^oe^wt ⁿen^Vv^oi^lr^tao^gn^ement
•
(_R^MIE_o=^I_H^L1^-_S0^S0_p^Tµ_r^DΑ_od)^-1_uc⁹_t⁵_f⁰_o⁰_r
/228
packing
code
suffix
al st
"G"
an
d
a
r
d_Vs_(Bo_Rf_)EBO
5
–
–
V
C^Ho^alle^oc^gt^eoⁿr-^fB^rea^ese^prB^or^de^ua^ck^td^forw^pn^aV^ckoⁱlⁿta^gg^ce^{ode suffix "H"}
Mechanical data
V(BR)CBO
40
–
(IC=100µΑ)
• Epoxy : UL94-V0 rated flame retardant
–
V
•^CC^oa^lls^ee^cto: M^{r C}o^uld^toe^fd^{f C}p^ula^rrs^etⁿic^t,⁽S^VO^CB=D³-⁵1^V23⁾ H
ICBO
–
–
150
nA
0.031(0.8) Typ.
• ETemrimtteinr aClusto:PfflaCtuerdretnetr(mViEnBa=l4sV, )solderable per MILIE-BSOTD-750, –
–
150
nA
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
• Polarity : Indicated by cathode band
• ^CM^ho^au^rn^at^tin^eg^risP^to^icsition : Any
Symbol Min Typ
Dimensions in inches and (millimeters)
Max Unit
• _DW_Cei_Cg_uh_rt _r:_eA_np_tp_Gro_ax_inimated 0.011 gram
IC=100m_MA_A,_XVC_IE_M=1_UV_{M RATINGS AND ELECTR}h_IF_CE _{AL CH}1_A0_R0 _ACTER-_ISTIC4_S00 MHZ
Ratings a_Ct_o2_l5_le℃_ctoa_rm_-Eb_mien_itt_tete_rm_Sp_ae_tr_ua_rtu_ar_te_iou_nnl_Ve_os_ls_tao_gth_eerwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capa⁽c^ICit⁼iv⁸e⁰l⁰o^mad^A, ^,d^Ie^Bra⁼t⁸e⁰c^mur^Are⁾nt by 20%
VCE(sat)
-
-
0.5
V
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maxim_Nu_Om_TR_EM_:S Voltage_*
P
Maximum DC Blocking Voltage
Maximum Average Fo^hrw^Fa^Erd Rectified10C0ur~re2n0t0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
15
16
VRRM
20
30
40
50
60
18
10
115 120
80
100
150
200
VRM_QS
14
21
28
R
35
42
VDC
20
30
40
50
60
56
70
105
140
80
100
150
200
15I0O ~300
200-400
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-^2012-06
WILLAS^WE^IL^LLE^AC^STR^EO^LEN^CIC^TRC^OO^NR^ICP.^COR