8050XLT1 Datasheet, PDF (3/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
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SOD-123+ PACKAGE
FM120-M+
8050xLT1 ^THRU
FM1200-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
betterFrIGev.1e-rCseurlreeankt Gagaien c&uCrroellnetcatonrdCtuhrerernmt al resistance.
1_•00_L0_{ow profile surface mounted application in order to}
optimize board space.
• Low power loss, high efficiency.
• High current capability, lo_Vw_CEf₌o_1Vrward voltage drop.
•¹⁰H⁰igh surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• ¹L⁰ead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
M¹echanical data
0.001 0.01
0.1
1
10
100
1000
• Epoxy : UL94-V0^Cr^oa^llet^ce^tod^{r C}fl^ua^rrm^ente^(mr^Ae⁾tardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
FIG.3 - On Voltage & Colle ctor Current
1
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
•
Weight
:
VBE(ON) @ VCE=1V
Approximated 0.011 gram
Package outline
FIG.2 - Saturation Voltage &_SOCo_Dl_-le₁c₂t₃o_Hr Current
1
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.1
0.071(1.8)
0.056(1.4)
VCE(sat) @ IC=10IB
0.01
0.01
0.1
1
10
100
Collector Current (mA)
1000 _{0 . 0 4 0 ( 1 . 0 )}
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
FIG.4 - Cutoff Frequency & Collector Current
1000
Dimensions in inches and (millimeters)
VCE=10V
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
10
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking 0C.1ode
12
Maximum R^0.e⁰¹current ⁰P^.1eak Reve¹rse Volta¹g⁰e
100
Collector Current (mA)
VR¹R⁰⁰M⁰
20
Maximum RMS Voltage
VRMS
14
13 1 14
30 ¹ 40
21
28
15
16
18
50¹_C⁰_ollector
60
Current
100
(mA)
80
35
42
56
10
1¹0⁰⁰0⁰
70
115 120
150
200
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Maximum₁₀₀Ave^Fr^Ia^Gg^.5e ^-Fo^Cr^aw^pa^ar^cd^{i t}R^ane^cc^etifi^&ed^RC^evu^err^re^sn^et^{-Biased Voltag}IO^e
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating₁₀Temperature Rang_Ce_ob
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC ¹B₀lo_.1cking Voltage ₁
@T₁A₀=125℃
IR
100
0.5
10
Reverse-Biased Voltage (V)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.