8050XLT1 Datasheet, PDF (1/4 Pages) WILLAS ELECTRONIC CORP – General Purpose Transistors

WILLAS
1.0^GA S^eUⁿRF^eAC^rE^aM^lO^PUN^uT S^rC^pHO^oTT^sK^eY B^TAR^rR^aIERⁿR^sEC^isTIF^tIE^oR^rS^s-20V- 200V
SOD-123+ PACKAGE
FM120-M+
8050xLT1^THRU
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
NPN Silicon • Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
F_•EA_HiT_gU_hR_suE_{rge capability.}
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• U^IClt⁼ra⁰h^.8i^Agh^. -speed switching.
ƽ• SEipliitcaoxniael ppliatanxairatlyppela. nar chip, metal silicon junction.
ƽ• LNePaNd-cformeeplpeamretsntm: 8e0e5t0environmental standards of
ƽ^MP^Ib^L-^-F^Sr^Te^De^-p¹a⁹c⁵k⁰a⁰g^/2e²i⁸s available
•
RoHS product for packing code suffix "G"
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M^He^ac^loh^geaⁿn^fri^ec^ea^prl^od^dua^ctta^{for packing code suffix “H”}
• Epoxy : UL94-V0 rated flame retardant
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT–23
COLLECTOR
3
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
DEVICE MARK^MIN^eG^thoA^dN²D⁰²O⁶RDERING INFORMATION
• P_Do_el_va_icri_ety : Indicated by cath_Mod_ae_rkb_ina_gnd
Shipping
• Mounting Position : Any
• W⁸⁰e⁵i⁰g^Ph^Lt ^T: ¹Approximated 0.011⁸g⁰r^Pam
3000/Tape&Reel
0.031(0.8) Typ.
1
BASE
0.031(0.8) Typ.
2
EMITTER
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
8050QLT1
1YC
3000/Tape&Reel
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capac₈i₀ti₅ve_0Rlo_La_Td₁, derate current by 20₁%_YE
3000/Tape&Reel
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 ^V
MaxMimAumXIDMCUBMlocRkiAngTVINolGtagSe
VDC
20
30
40
50
60
80
100
150
200 ^V
Maximum Average Fo^Rrw^ataⁱrⁿd^gRectified Current
IO ^Symbol
Max
Unit
1.0
A
Collector-Emitter Voltage
VCEO
25
V
Peak Forw_Ca_or_ld_leS_cu_torg_re_-BC_au_srr_een_Vt_o8_l._t3_agm_es single half sine-wave _{IFSM VCBO}
40
V
30
A
superimpo_Es_med_itto_en_r-r_Bat_ae_sd_elo_Va_od_lt(_aJE_gD_eEC method)
VEBO
5
V
Typical T_Che_or_llm_ea_ctl_oR_re_Csi_us_rta_ren_nc_te_-c(N_ono_tt_ie_nu2)_oun
RΘJA
IC
800
mAdc
40
℃
Typical Junction Capacitance (Note 1)
CJ
120
Oper_Ta_Htin_Eg_RT_Mem_Ap_Lera_Ctu_Hre_AR_Ra_Ang_Ce_TERISTICS
TJ
-55 to +125
-55 to +150
Storage Temperature Ra_Cng_he_aracteristic
TSTG
Symbol
Max
Unit ^{- 65 to +175}
Total Dev_Cic_He_AD_Ris_As_Cip_Ta_Et_Rio_In_STF_IR_C-_S5 Board,(1) _{SYMBOL FM120-}P_MD_{H FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U}
Maximum _TF_Ao₌rw₂₅a_°r_Cd Voltage at 1.0A DC
VF
0.5₂0₂₅
mW^0.70
0.85
0.9
0.92 V
Maximum _DA_eve_rara_tege_abR_oe_vv_eer₂se_5°C_Current at @T A=25℃
IR
1.8
mW/°C
0.5
m
Rated DC Blocking Voltage
@T A=125℃
10
Thermal Resistance,Junction to Ambient
R θJ A
556
°C/W
NOTES:
1- Measure^Td^oa^tt^a1^{l D}M^eH^vZ^ica^end^Da^isp^spⁱl^pie^ad^tir^oeⁿverse voltage of 4.0 VDC.
P_D
2- Thermal ^AR^le^us^mistⁱⁿan^ac^Se ^uF^bro^sm^traJu^ten^,c⁽t²io⁾n^Tt^Ao⁼A²m⁵b^°i^Cent
300
mW
Derate above 25°C
2.4
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R θJ A
T j,T St g
417
-55 to +150
°C/W
°C
2012-²^012-06
WILLAS^WE^ILL^LE^AC^ST^ER^LO^EN^CTIC^ROC^NO^IR^CP^C.^ORP