MMBT6427 Datasheet, PDF (4/5 Pages) Samsung semiconductor – NPN (DARLINGTON TRANSISTOR)

MMBT6427
SMALL–SIGNAL CHARACTERISTICS
3.0
2.5
I C = 10 mA 50 mA
2.0
T J = 25°C
250 mA 500 mA
1.5
1.6
T J = 25°C
1.4
V BE(sat) @ I C /I B = 1000
1.2
V BE(on) @ V CE = 5.0 V
1.0
1.0
0.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
500 1000
I B , BASE CURRENT (µA)
Figure 9. Collector Saturation Region
–1.0
*APPLIES FOR I C / I B < h FE /3.0
–2.0 *R θVC FOR V CE(sat)
–3.0
25°C TO 125°C
–55°C TO 25°C
–4.0
θ VB FOR V BE
–5.0
25°C TO 125°C
–55°C TO 25°C
0.8
V CE(sat) @ I C /I B = 1000
0.6
5.0 7.0 10
20 30 50 70 100
200 300 500
I C , COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
FIGURE A
tP
PP
PP
t1
–6.0
5.0 7.0 10
20 30 50 70 100
200 300 500
I C , COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
1/f
DUTY
CYCLE
=t
1
f
=
t
t
1
P
PEAK PULSE POWER = P P
Design Note: Use of Transient Thermal Resistance Data
1.0
0.7 _{D = 0.5}
0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
SINGLE PULSE
SINGLE PULSE
Z θJC(t) = r(t) • R θJC T J(pk) – T C = P (pk) Z θJC(t)
Z θJA(t) = r(t) • R θJA T J(pk) – T A = P (pk) Z θJA(t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
Figure 12. Thermal Response
500
1.0k 2.0k
5.0k
10k
WEITRON
4/5
http://www.weitron.com.tw
21-Dec-07