MMBT6427 Datasheet, PDF (1/5 Pages) Samsung semiconductor – NPN (DARLINGTON TRANSISTOR)

NPN Transistors ^{Darlington Amplifier}
* We declare that the material of product compliance with RoHS requirements.
P b Lead(Pb)-Free
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Collector Current — Continuous I _C
V alue
40
40
12
500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT6427 = 1V
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I _C = 10 mAdc, V _BE = 0)
V _(BR)CEO
40
Collector–Base Breakdown Voltage
(I _C = 100 µAdc, I _E = 0)
V _(BR)CBO
40
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc, I _C = 0)
V _(BR)EBO
12
Collector Cutoff Current
( V _CE = 25Vdc, I _B = 0)
I _CES
—
Collector Cutoff Current
( V _CB = 30Vdc, I _E = 0)
I _CBO
—
Emitter Cutoff Current
( V _EB = 10Vdc, I _C= 0)
I _EBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
—
V
—
V
—
V
1.0
µA
50
nA
50
nA
MMBT6427
COLLECTOR 3
BASE
1
EMITTER 2
3
1
2
SOT-23
WEITRON
1/5
http://www.weitron.com.tw
21-Dec-07