MMBT6427 Datasheet, PDF (2/5 Pages) Samsung semiconductor – NPN (DARLINGTON TRANSISTOR)

MMBT6427
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = 10 mAdc, V CE = 5.0 Vdc)
(I _C = 100 mAdc, V _CE = 5.0Vdc)
(I C = 500 mAdc, V CE = 5.0Vdc)
Collector–Emitter Saturation Voltage
(I C = 50 mAdc, I B = 0.5 mAdc)
(I C = 500 mAdc, I B = 0.5 mAdc)
Base–Emitter Saturation Voltage
(I C = 500 mAdc, I B = 0.5 mAdc)
Base–Emitter On Voltage
(I C = 50 mAdc, V CE = 5.0Vdc)
hFE
V_CE(sat)(3)
V BE(sat)
V BE(on)
10,000
20,000
14,000
––
––
––
—
Max
100,000
200,000
140,000
1.2
1.5
2.0
1.75
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)
Current Gain–High Frequency
(V CE = 5.0 Vdc, I C = 10mAdc, f = 100 MHz)
Noise Finure
(V CE=5.0 Vdc, I C = 1.0 mAdc , R S =100 kΩ, f = 1.0 kHz )
3. Pulse Tent: Pulse Width = 300µs, Duty Cycle = 2.0%
C obo
C ibo
|h _fe |
NF
––
7.0
––
15
1.3
—
—
10
Unit
––
V
V
V
pF
pF
V
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
500
BANDWIDTH = 1.0 Hz
R S~~ 0
200
100
10 µA
50
100 µA
20
I C = 1.0 mA
10
5.0
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
WEITRON
2/5
http://www.weitron.com.tw
21-Dec-07