MMBT6427 Datasheet, PDF (3/5 Pages) Samsung semiconductor – NPN (DARLINGTON TRANSISTOR)

MMBT6427
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
BANDWIDTH = 1.0 Hz
200
100 ^{BANDWIDTH = 10 Hz TO 15.7 kHz}
I C = 1.0 mA
70 ^{I C = 10 µA}
50
100 µA
10 µA
30
100 µA
20
1.0 mA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
10
1.0 2.0
5.0 10 20
50
100 200
500 1000
f, FREQUENCY (Hz)
Figure 3. Noise Current
R S , SOURCE RESISTANCE (kΩ)
Figure 4. Total Wideband Noise Voltage
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
10
10 µA
8.0
100 µA
6.0
4.0 I C = 1.0 mA
2.0
0
1.0 2.0
5.0 10 20
50 100 200
500 1000
R S , SOURCE RESISTANCE (kΩ)
Figure 5. Wideband Noise Figure
SMALL–SIGNAL CHARACTERISTICS
4.0
V CE = 5.0 V
f = 100 MHz
2.0 T J = 25°C
1.0
0.8
0.6
0.4
0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
500
I C , COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
SMALL–SIGNAL CHARACTERISTICS
20
T J = 25°C
10
7.0
C ibo
5.0
C obo
3.0
2.0
0.04
0.1 0.2 0.4
1.0 2.0 4.0
10 20
40
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
SMALL–SIGNAL CHARACTERISTICS
200
T J = 125°C
100
70
50
25°C
30
20
10
7.0
5.0
–55°C
3.0
V CE = 5.0 V
2.0
5.0 7.0 10
20 30 50 70 100
200 300 500
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
WEITRON
3/5
http://www.weitron.com.tw
21-Dec-07