MMBT5088 Datasheet, PDF (4/5 Pages) Samsung semiconductor – NPN (LOW NOISE TRANSISTOR)

MMBT5088
MMBT5089
4.0
3.0
V _CE =5.0 V
2.0
1.0
0.7
0.5
0.4
0.3
T _A=125°C
25°C
–55°C
0.2
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I _C , COLLECTOR CURRENT (mA)
Fig 8. DC Current Gain
1.0
T _J =25°C
0.8
0.6 V _BE @ V _CE = 5.0V
0.4
0.2
V @ _CE(sat) I _C /I _B =10
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
10 20
I _C, COLLECTOR CURRENT (mA)
Fig 9. “On” Voltages
50 100
–0.4
–0.8
–1.2
–1.6
T _J=25°C to 125°C
–2.0
–55°C to25°C
–0.4
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
I _C , COLLECTOR CURRENT (mA)
Fig 10. Temperature Coefficients
0.8
0.6
T _J = 25°C
0.4
C_ob
C_ib
C eb
0.3
C_cb
0.2
1.0
0.8
0.1
0.2 0.5 1.0
2.0 5.0 10
20 50 100
V _R , REVERSE VOLTAGE (VOLTS)
Fig 11. Capacitance
500
300
200
100
70
V _CE = 5.0 V
T _J = 25°C
50
1.0
2.0
5.0
10
20
50
100
I _C, COLLECTOR CURRENT (mA)
Fig 12. Current–Gain - Bandwidth Product
WEITRON
4/5
http://www.weitron.com.tw
13-Jan-06