MMBT5088 Datasheet, PDF (2/5 Pages) Samsung semiconductor – NPN (LOW NOISE TRANSISTOR)

MMBT5088
MMBT5089
Electrical Characteristics (TA=25˚C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
On Characteristics
DC Current Gain
VCE = 5.0V, IC = 100µA
VCE= 5.0V, IC= 1.0mA
VCE= 5.0V, IC= 10mA
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
hFE(1)
300
400
hFE(2)
350
450
hFE(3)
300
400
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 1.0mA
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
VCE(sat)
-
VBE(sat)
-
Small-signal Characteristics
Current-Gain-Bandwidth Product
VCE= 5.0V, IC = 500µA, f=20MHz)
Collector-Base Capacitance
VCB = 5.0V, IE = 0, f = 1.0MHz emitter guarded
Emitter-Base Capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz collector guarded
fT
50
Ccb
-
Ceb
-
Small-Signal Current Gain
VCE= 5.0V, IC=1.0 mA, f=1.0 kHz
Noise Figure
VCE = 5.0V, IC = 100 µA, RS=1.0k ohms, f=1.0kHz
MMBT5088
MMBT5089
MMBT5088
MMBT5089
hfe
350
450
NF
-
Max
Unit
900
1200
-
-
-
-
-
0.5
V
0.8
V
-
MHz
4.0
pF
10
pF
1400
-
1800
3.0
dB
2.0
RS
~
in
e_n
IDEAL
TRANSISTOR
Fig 1.Transistor Noise Model
WEITRON
2/5
http://www.weitron.com.tw
13-Jan-06