MMBT5088 Datasheet, PDF (3/5 Pages) Samsung semiconductor – NPN (LOW NOISE TRANSISTOR)

MMBT5088
MMBT5089
NOISE CHARACTERISTICS ^(V CE ^{= 5.0 Vdc, T} A ^{= 25°C)}
NOISE VOLTAGE
30
BANDWIDTH=1.0Hz
20
I _C = 10 mA
R _S~~ 0
3.0mA
10
1.0mA
7.0
5.0
3.0
10 20
300µA
50 100 200 5001.0k
2.0k 5.0k 10k
20k 50k100k
f, FREQUENCY (Hz)
Fig 2. Effects of Frequency
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1 ^{R S~~ 0}
10 20 50 100
10µA
200 5001.0k
BANDWIDTH=1.0Hz
I C=10mA
3.0mA
1.0mA
300µA
100µA
30µA
2.0k 5.0k 10k 20k 50k100k
f, FREQUENCY (Hz)
Fig 4. Noise Current
30
BANDWIDTH=1.0Hz
20
R S~~ 0
10
7.0
5.0
f = 10Hz
100Hz
10kHz
1.0kHz
3.0
0.01 0.02
0.05 0.1 0.2
100kHz
0.5 1.0 2.0
5.0 10
I _C , COLLECTOR CURRENT (mA)
Fig 3. Effects of Collector Current
20
16
BANDWIDTH=10 Hz to15.7 kHz
12
I C =1.0 mA
8.0
500µA
100µA
4.0
10µA
0
10 20
50 100 200 500 1k 2k
5k 10k 20k 50k 100k
R _S , SOURCE RESISTANCE (OHMS)
Fig 5. Wideband Noise Figure
100 Hz NOISE DATA
300
200 _{BANDWIDTH=1.0Hz}
I _C =10mA
100
100µA
70
3.0mA
50
1.0mA
30
300µA
20
30µA
10
7.0
5.0
3.0
10 20
50 100
10µA
200 5001.0k 2.0k 5.0k 10k 20k 50k100k
20
16
I _C = 10mA
3.0mA
1.0mA
12
300µA
8.0
100µA
4.0
BANDWIDTH=1.0Hz
0
10 20 50 100 200 500 1.0k 2.0k
30µA
5.0k 10k 20k
10µA
50k 100k
R _S, SOURCE RESISTANCE (OHMS)
Fig 6. Total Noise Voltage
R _S , SOURCE RESISTANCE (OHMS)
Fig 7. Noise Figure
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13-Jan-06