MMBT5088 Datasheet, PDF (1/5 Pages) Samsung semiconductor – NPN (LOW NOISE TRANSISTOR)

Low Noise NPN Transistor
Surface Mount
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-B as e Voltage
E m itter-B as e Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dis s ipation FR -5 B oard ⁽¹⁾
TA=25 C
Derate above 2 5 C
Thermal Res is tance, Junction to Ambient
Total Device Dis s ipation
Alumina S ubs trate, ⁽²⁾ T A=2 5 C
Derate above 2 5 C
Thermal Res is tance, Junction to Ambient
J unction and S torage, Tem perature
Device Marking
MMBT5088=1Q ; MMBT5089=1R
COLLECTOR
3
1
BASE
2
EMITTER
MMBT5088
MMBT5089
3
1
2
SOT-23
Symbol
VCEO
VCB _O
VE _{B O}
IC
5088LT1
30
35
5089LT1
25
30
4.5
50
Unit
Vdc
Vdc
Vdc
m Adc
Symbol
PD
R _JA
PD
R _JA
T _{J,Ts tg}
Max
225
1.8
556
300
2.4
417
-5 5 to +1 5 0
Unit
mW
mW/ C
C/ W
mW
mW/ C
C/ W
C
Electrical Characteristics (T_A=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Off Characteristics
Collent-Emitter Breakdown Voltage
IC = 1.0mA, IB=0
MMBT5088
IC = 1.0mA, IB=0
MMBT5089
Collent-Base Breakdown Voltage
IC = 100µA, IE=0
MMBT5088
IC = 100µA, IE=0
MMBT5089
Collent Cutoff Current
VCB = 20V, IE=0
VCB = 15V, IE=0
MMBT5088
MMBT5089
Emitte Cutoff Current
VEB(off) = 3.0V, IC=0
VEB(off) = 4.5V, IC=0
MMBT5088
MMBT5089
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V(B R )CE O
30
-
V
25
V(B R )CB O
35
-
V
30
ICB O
IE B O
-
50
nA
50
-
50
nA
100
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1/5
http://www.weitron.com.tw
13-Jan-06