MMBT2907 Datasheet, PDF (4/6 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

MMBT2907
MMBT2907A
Typical Characteristics(Continued)
250
IB1=IB2=
Ic
10
200
VCC=15V
ts
150
100
tf
50
tr
td
0
10
100
1000
Ic-COLLECTOR CURRENT (mA)
FIG.7 Switching Times
vs Collector Current
500
IB1=IB2=
Ic
10
400
VCC=15V
300
200
100
0
10
t _off
t _on
100
1000
Ic-COLLECTOR CURRENT (mA)
FIG.8 Turn On and Turn Off Times
vs Collector Cuttent
50
20
10
tr=15V
5
30ns
2
60ns
110
100
500
IC COLLERTOR CURRENT (mA)
FIG.9 Rise Time vs Collector
and Turn On Base Current
1
0.75
0.5
SOT-23
0.25
00
25
50
75
100
125
150
TEMPERATURE ( C)
FIG.10 Power Dissipation
vs Ambient Temperature
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