MMBT2907 Datasheet, PDF (1/6 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

PNP General Purpose Transistors
MMBT2907
MMBT2907A
COLLECTOR
3
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
1
BASE
2
EMITTER
1
2
SOT-23
2907
-40
2907A
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
DEVICE MARKING
MMBT2907=M2B; MMBT2907A=2F
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
PD
R _qJA
PD
R _qJA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
MMBT2907
MMBT2907A
V(BR)CEO
-40
-60
-
-
Vdc
Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0)
V(BR)CBO
-60
-
Vdc
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
V(BR)EBO
-5.0
-
Vdc
Collector Cutoff Current (VCE= -30 Vdc, VEB _{(0ff )=} -0.5Vdc)
Collector Cutoff Current (VCB= -50 Vdc, IE=0)
(VCB= -50Vdc, IE=0, TA=125 C)
Base Cutoff Current (VCE= -30Vdc, VEB(off ₎₌ -0.5Vdc)
MMBT2907
MMBT22907A
MMBT2907
MMBT2907A
MMBT2907A
ICEX
ICBO
IB
-
-50
nAdc
-
-0.020
-
-0.010
-
-20
nAdc
-
-10
-
-50
nAdc
1.FR-5=1.0 x 0.75 x 0.062 in
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
WEITRON
http://www.weitron.com.tw