MMBT2907 Datasheet, PDF (2/6 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

MMBT2907
MMBT2907A
ELECTRICAL CHARACTERISTICS (T_A=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(IC= -0.1 mAdc, VCE= -10 Vdc)
(IC= -1.0 mAdc, VCE= -10 Vdc)
(IC= -10 mAdc, VCE= -10 Vdc)
(IC= -150 mAdc, VCE= -10 Vdc)
(IC= -500 mAdc, VCE= -10 Vdc)
Collector-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
Base-Emitter Saturation Voltage
(IC= -150 mAdc, IB= -15mAdc)
(IC= -500 mAdc, IB= -50mAdc)
hFE
MMBT2907
35
MMBT2907A
75
MMBT2907
50
MMBT22907A
100
MMBT2907
75
MMBT22907A
100
MMBT2907
MMBT2907A
100
MMBT2907
30
MMBT2907A
50
VCE(sat)
-
-
VBE(sat)
-
-
Max
Unit
-
-
-
-
-
-
300
-
-
-0.4
Vdc
-1.6
-1.3
Vdc
-2.6
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (1),(2)
(IC= -50 mAdc, VCE _-=20 Vdc, f=100MHz)
Output Capacitance
(VCB= -10 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= -2.0 Vdc, IC=0, f=1.0MHz)
fT
Cobo
Cibo
200
-
MHz
-
-
8.0
pF
-
-
30
pF
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
(VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc)
Rise Time
Turn-Out Time
Storage Time
Fall Time
(VCC= -60 Vdc, IC= -150 mAdc,
IB1=IB2= -15 mAdc)
1.Pulse Test:Pulse Width=300 µs, Duty Cycle<_2.0%.
2.f_T is defined as the frequency at which hfe extrapolates to unity.
ton
-
45
td
-
10
tr
-
40
ns
toff
-
100
ts
-
80
tf
-
30
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