MMBT2907 Datasheet, PDF (3/6 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

MMBT2907
MMBT2907A
Typical Electrical Characteristics
500
400
125 C
300
25 C
200
VCE=5V
100
-40 C
0
0.1 0.3 1
3
10 30 100 300
I_C COLLECTOR CURRENT(mA)
FIG.1 Typical Pulsed Current Gain
vs Collector Current
1
0.8
-40 C
25 C
0.6
125 C
0.4
0.2
b=10
01
10
100
500
Ic-COLLECTOR CURRENT (mA)
FIG.3 Base-Emitter Saturation Voltage
vs Collector Current
100
VCB=35V
10
1
0.1
0.01
25
50
75
100
125
TA- AMBIENT TEMPERATURE ( C)
FIG.5 Collector-Cutoff Current
vs. Ambient Temperature
0.5
b=10
0.4
0.3
25 C
0.2
0.1
125 C
-40 C
0
1
10
100
500
IC COLLECTOR CURRENT(mA)
FIG.2 Collector-Emitter Saturation
Voltage vs collector Current
1
0.8
-40 C
0.6
25 C
125 C
0.4
0.2
VCE=5V
0
0.1
1
10
25
Ic-COLLECTOR CURRENT (mA)
FIG.4 Base Emitter ON Voltage
vs Collector Current
20
16
12
Cib
8
4
Cob
0
-0.1
-1
-10
-50
REVERSE BIAS VOLTAGE (V)
FIG.6 Input and Output Capacitance
vs Reverse Bias Voltage
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