WCMA4016U4X Datasheet, PDF (3/12 Pages) Weida Semiconductor, Inc. – 256K x 16 Static RAM

WCMA4016U4X
Param-
eter
Description
V_OH
Output HIGH Voltage
V_OL
Output LOW Voltage
V_IH
Input HIGH Voltage
V_IL
Input LOW Voltage
I_IX
Input Leakage Cur-
rent
I_OZ
Output Leakage Cur-
rent
I_CC
V_CC Operating Supply
Current
Automatic CE
Power-Down Cur-
I_SB1
rent— CMOS Inputs
Automatic CE
I_SB2
Power-Down Cur-
rent— CMOS Inputs
Test Conditions
I_OH = –1.0 mA
I_OL = 2.1mA
V_CC = 2.7V
V_CC = 2.7V
GND < V_I < V_CC
GND < V_O < V_CC, Output Disabled
f = f_MAX = 1/t_RC
f = 1 MHz
V_CC = 3.3V
I_OUT = 0 mA
CMOS Levels
CE > V_CC – 0.2V
V_IN > V_CC – 0.2V or V_IN < 0.2V,
f = f_max (Address and Data Only),
f=0 (OE,WE,BHE and BLE)
CE > V_CC – 0.2V
V_IN > V_CC – 0.2V or V_IN < 0.2V,
f = 0, Vcc=3.3V
WCMA4016U4X
Min.
2.4
2.2
–0.3
–1
Typ.^[4]
Max.
0.4
V_CC + 0.3V
0.8
+1
Unit
V
V
V
V
µA
–1
+1
µA
7
15
1.5
3
mA
7
15
µA
Capacitance^[5]
Parameter
C_IN
C_OUT
Description
Input Capacitance
Output Capacitance
.
Test Conditions
T_A = 25°C, f = 1 MHz,
V_CC = V_CC(typ.)
Max.
Unit
6
pF
8
pF
Thermal Resistance
Description
Test Conditions
Thermal Resistance
(Junction to Ambient)^[5]
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer
printed circuit board
Thermal Resistance
(Junction to Case)^[5]
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
Symbol
Θ_JA
Θ_JC
BGA
55
16
Units
°C/W
°C/W
3