WCMA4016U4X Datasheet, PDF(1/12 Page) Weida Semiconductor, Inc.

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

WCMA4016U4X Datasheet, PDF (1/12 Pages) Weida Semiconductor, Inc. – 256K x 16 Static RAM

A4016U4X

WCMA4016U4X

Features

â¢ Low Voltage range:

â 2.7V-3.3V

â¢ Ultra-low active power

â Typical active current: 1.5 mA @ f = 1MHz

â Typical active current: 7 mA @ f = fmax

â¢ Low standby power

â¢ Easy memory expansion with CE and OE features

â¢ Automatic power-down when deselected

â¢ CMOS for optimum speed/power

Functional Description

The WCMA4016U4X is a high-performance CMOS static

RAMs organized as 256K words by 16 bits. These devices

feature advanced circuit design to provide ultra-low active cur-

rent. This device is ideal for portable applications such as cel-

lular telephones. The devices also have an automatic pow-

er-down feature that significantly reduces power consumption

by 80% when addresses are not toggling. The device can also

be put into standby mode reducing power consumption by

256K x 16 Static RAM

more than 99% when deselected (CE HIGH or both BLE and

BHE are HIGH). The input/output pins (I/O0 through I/O15) are

placed in a high-impedance state when: deselected (CE

HIGH), outputs are disabled (OE HIGH), both Byte High En-

able and Byte Low Enable are disabled (BHE, BLE HIGH), or

during a write operation (CE LOW and WE LOW).

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is

written into the location specified on the address pins (A0

through A17). If Byte High Enable (BHE) is LOW, then data

from I/O pins (I/O8 through I/O15) is written into the location

specified on the address pins (A0 through A17).

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing the

Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,

then data from the memory location specified by the address

pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is

LOW, then data from memory will appear on I/O8 to I/O15. See

the truth table at the back of this data sheet for a complete

description of read and write modes.

The WCMA4016U4X is available in a 48-ball FBGA package.

Logic Block Diagram

DATA IN DRIVERS

A10

256K x 16

RAM Array

2048 x 2048

I/O0 â I/O7

I/O8 â I/O15

COLUMN DECODER

Power -Down

Circuit

BHE

BLE

BHE

BLE

▷