English
Language : 

WCMA1008C1X Datasheet, PDF (3/11 Pages) Weida Semiconductor, Inc. – 128K x 8 Static RAM
WCMA1008C1X
Electrical Characteristics Over the Operating Range
Param-
eter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
Test Conditions
VCC = Min., IOH = – 1 mA
VCC = Min., IOL = 2.1 mA
VIL
Input LOW Voltage
IIX
Input Leakage Current GND ≤ VI ≤ VCC
IOZ
Output Leakage
Current
GND ≤ VI ≤ VCC, Output Dis-
abled
ICC
VCC Operating
Supply Current
f=fMAX=1/tRC IOUT =0 mA
VCC = Max.,
ISB1
Automatic CE
Max. VCC,CE1≥VIH,CE2<VIH
Power-Down Current VIN ≥ VIH or VIN ≤ VIL, f = fMAX
—TTL Inputs
ISB2
Automatic CE
Max. VCC, CE1 ≥ VCC –
Power-Down Current 0.3V,CE2 <0.3
—CMOS Inputs
VIN ≥ VCC – 0.3V, or VIN ≤
0.3V, f =0
WCMA1008C1X-55
Min. Typ.[2] Max.
2.4
0.4
2.2
VCC
+0.3
–0.3
0.8
–1
+1
–1
+1
7.5
20
0.1
2
2.5
15
WCMA1008C1X-70
Min. Typ.[2] Max.
2.4
0.4
2.2
VCC
+0.3
–0.3
0.8
–1
+1
–1
+1
Units
V
V
V
V
µA
µA
6
15 mA
0.1
1
mA
15 µA
Capacitance[3]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
Unit
9
pF
9
pF
AC Test Loads and Waveforms
R1 1800 Ω
5V
R1 1800Ω
5V
OUTPUT
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
(a)
R2
990 Ω
5 pF
INCLUDING
JIG AND
SCOPE
(b)
Equivalent to: THEVENIN EQUIVALENT
OUTPUT
639 Ω
1.77V
R2
990 Ω
3.0V
GND
≤ 3 ns
Note:
3. Tested initially and after any design or process changes that may affect these parameters.
ALL INPUT PULSES
90%
10%
90%
10%
≤ 3 ns
Page 3 of 11