WCFS0808C1E Datasheet, PDF (1/10 Pages) Weida Semiconductor, Inc. – 32K x 8 Static RAM

S0808C1E
WCFS0808C1E
Features
• High speed
— 12 ns
• Fast t_DOE
• CMOS for optimum speed/power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
Functional Description
The WCFS0808C1E is a high-performance CMOS static RAM
organized as 32K words by 8 bits. Easy memory expansion is
provided by an active LOW Chip Enable (CE) and active LOW
Output Enable (OE) and three-state drivers. This device has
Logic Block Diagram
32K x 8 Static RAM
an automatic power-down feature, reducing the power con-
sumption by 81% when deselected. The WCFS0808C1E is in
the standard SOJ package.
An active LOW Write Enable signal (WE) controls the writ-
ing/reading operation of the memory. When CE and WE inputs
are both LOW, data on the eight data input/output pins (I/O₀
through I/O₇) is written into the memory location addressed by
the address present on the address pins (A₀ through A₁₄).
Reading the device is accomplished by selecting the device
and enabling the outputs, CE and OE active LOW, while WE
remains inactive or HIGH. Under these conditions, the con-
tents of the location addressed by the information on address
pins are present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. A die coat is used to improve alpha immunity.
Pin Configurations
A₀
A₁
A₂
A₃
A₄
A₅
A₆
A₇
A₈
A₉
CE
WE
OE
INPUT BUFFER
1024 x 32 x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
SOJ
Top View
A_{5 1}
28 V_CC
I/O₀
A_{6 2}
27 WE
A_{7 3}
26 A₄
I/O₁
A_{8 4}
25 A₃
I/O₂
A_{9 5}
A_{10 6}
24 _A2
23 _A1
I/O₃
A_{11 7}
A_{12 8}
22 _OE
21 A₀
I/O₄
A_{13 9}
20 CE
A_{14 10}
19 I/O₇
I/O₅
I/O₀ 11
18 I/O₆
I/O₆
I/O₁ 12
I/O₂ 13
17 _I/O5
16 _I/O4
I/O₇
GND 14
15 I/O₃
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
WCFS0808C1E 12ns
12
160
10
WCFS0808C1E 15ns
15
155
10
Revised February 18, 2002