W332M72V-XSBX Datasheet, PDF (7/15 Pages) White Electronic Designs Corporation – 32Mx72 Synchronous DRAM

White Electronic Designs
W332M72V-XSBX
TRUTH TABLE - COMMANDS AND DQM OPERATION (NOTE 1)
NAME (FUNCTION)
COMMAND INHIBIT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row) ( 3)
READ (Select bank and column, and start READ burst) (4)
WRITE (Select bank and column, and start WRITE burst) (4)
BURST TERMINATE
PRECHARGE (Deactivate row in bank or banks) ( 5)
AUTO REFRESH or SELF REFRESH (Enter self refresh mode) (6, 7)
LOAD MODE REGISTER (2)
Write Enable/Output Enable (8)
Write Inhibit/Output High-Z (8)
CS# RAS# CAS# WE# DQM
H
X
X
X
X
L
H
H
H
X
L
L
H
H
X
L
H
L
H
L/H ⁸
L
H
L
L
L/H ⁸
L
H
H
L
X
L
L
H
L
X
L
L
L
H
X
L
L
L
L
X
–
–
–
–
L
–
–
–
–
H
ADDR
X
X
Bank/Row
Bank/Col
Bank/Col
X
Code
X
Op-Code
–
–
I/Os
X
X
X
X
Valid
Active
X
X
X
Active
High-Z
NOTES:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0-11 define the op-code written to the Mode Register and A12 should be driven
low.
3. A0-12 provide row address, and BA0, BA1 determine which bank is made active.
4. A0-9 provide column address; A10 HIGH enables the auto precharge feature
(nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1
determine which bank is being read from or written to.
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks
precharged and BA0, BA1 are “Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is
LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t
Care” except for CKE.
8. Activates or deactivates the I/Os during WRITEs (zero-clock delay) and READs
(two-clock delay).
COMMANDS
The Truth Table provides a quick reference of available
commands. This is followed by a written description of each
command. Three additional Truth Tables appear following
the Operation section; these tables provide current state/
next state information.
COMMAND INHIBIT
The COMMAND INHIBIT function prevents new commands
from being executed by the SDRAM, regardless of whether
the CLK signal is enabled. The SDRAM is effectively
deselected. Operations already in progress are not
affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to perform
a NOP to an SDRAM which is selected (CS# is LOW).
This prevents unwanted commands from being registered
during idle or wait states. Operations already in progress
are not affected.
LOAD MODE REGISTER
The Mode Register is loaded via inputs A0-11 (A12
should be driven low). See Mode Register heading in the
Register Definition section. The LOAD MODE REGISTER
command can only be issued when all banks are idle, and
a subsequent executable command cannot be issued until
tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate) a
row in a particular bank for a subsequent access. The
value on the BA0, BA1 inputs selects the bank, and the
address provided on inputs A0-12 selects the row. This row
remains active (or open) for accesses until a PRECHARGE
command is issued to that bank. A PRECHARGE
command must be issued before opening a different row
in the same bank.
READ
The READ command is used to initiate a burst read
access to an active row. The value on the BA0, BA1 inputs
selects the bank, and the address provided on inputs A0-9
selects the starting column location. The value on input
A10 determines whether or not AUTO PRECHARGE is
used. If AUTO PRECHARGE is selected, the row being
accessed will be precharged at the end of the READ
burst; if AUTO PRECHARGE is not selected, the row will
remain open for subsequent accesses. Read data appears
on the I/Os subject to the logic level on the DQM inputs
Ju;y 2006
Rev. 3
7
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