W3E64M72S-XBX Datasheet, PDF (12/19 Pages) White Electronic Designs Corporation – 64Mx72 DDR SDRAM

White Electronic Designs
W3E64M72S-XBX
ADVANCED
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1-5, 16)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Supply Voltage (36, 41)
I/O Supply Voltage (36, 41, 44)
Input Leakage Current: Any one input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
Input Leakage Address Current (All other pins not under test = 0V)
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
I/O Reference Voltage (6,44)
I/O Termination Voltage (7, 44)
Symbol
VCC
VCCQ
II
II
IOZ
IOH
IOL
VREF
VTT
Min
2.3
2.3
-2
-18
-5
-12
12
0.49 x VCCQ
VREF - 0.04
Max
2.7
2.7
2
18
5
-
-
0.51 x VCCQ
VREF + 0.04
Units
V
V
µA
µA
µA
mA
mA
V
V
Parameter/Condition
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≤ +125°C
Symbol
Min
VIH
VREF +0.500
VIL
—
Max
—
VREF -0.500
Units
V
V
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
June 2005
Rev. 0
12
White Electronic Designs Corporation • [phone] • www.wedc.com