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VSC7135 Datasheet, PDF (8/16 Pages) Vitesse Semiconductor Corporation – 1.25Gbits/sec Gigabit Ethernet Transceiver | |||
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VITESSE
SEMICONDUCTOR CORPORATION
1.25Gbits/sec
Gigabit Ethernet Transceiver
Data Sheet
VSC7135
DC Characteristics (Over recommended operating conditions).
Parameters
Description
Min Typ Max Units
VOH
Output HIGH voltage (TTL) 2.4
â
â
V
VOL
Output LOW voltage (TTL)
â
â
0.5
V
âVOUT751
TX Output differential peak-
to-peak voltage swing
1200
â
2200 mVp-p
âVOUT501
TX Output differential peak-
to-peak voltage swing
1200
â
2200 mVp-p
âVIN1
Receiver differential peak-to-
peak Input Sensitivity RX
400
â 3200 mVp-p
VIH
VIL
IIH
IIL
VDD
Input HIGH voltage (TTL)
2.0
â
5.5
V
Input LOW voltage (TTL)
0
â
0.8
V
Input HIGH current (TTL)
â
50
500
µA
Input LOW current (TTL)
â
â -500
µA
Supply voltage
3.14
â
3.47
V
PD
Power dissipation
â
625 900
mW
IDD
Supply Current
â
190 260
mA
Note: (1) Refer to Application Note, AN-37, for differential measurement techniques.
Conditions
IOH = -1.0 mA
IOL = +1.0 mA
75⦠to VDD â 2.0 V
(TX+ - TX-)
50⦠to VDD â 2.0 V
(TX+ - TX-)
Internally biased to Vdd/2
(RX+ - RX-)
â
VIN =2.4V
VIN =0.5V
3.3V±5%
Outputs open,
VDD = VDD max
Outputs open,
VDD = VDD max
Absolute Maximum Ratings (1)
Power Supply Voltage, (VDD) ............................................................................................................ -0.5V to +4V
DC Input Voltage (PECL inputs) ............................................................................................ -0.5V to VDD +0.5V
DC Input Voltage (TTL inputs)......................................................................................................... -0.5V to 5.5V
DC Output Voltage (TTL Outputs) ........................................................................................ -0.5V to VDD + 0.5V
Output Current (TTL Outputs) ................................................................................................................ +/-50mA
Output Current (PECL Outputs) ............................................................................................................... +/-50mA
Case Temperature Under Bias......................................................................................................... -55o to +125oC
Storage Temperature .................................................................................................................... -65oC to +150oC
Maximum Input ESD (Human Body Model) .............................................................................................. 1500 V
Recommended Operating Conditions
Power Supply Voltage, (VDD) ................................................................................................................ +3.3V+5%
Operating Temperature Range ............................................................. 0oC Ambient to +95oC Case Temperature
Notes:
(1) CAUTION: Stresses listed under âAbsolute Maximum Ratingsâ may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Page 8
© VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 ⢠805/388-3700 ⢠FAX: 805/987-5896
G52146-0, Rev. 4.0
5/28/98
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