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| SI4621DY Datasheet, PDF (9/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode | |||
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Si4621DY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
0.1
0.01
10-4
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
2. Per Unit Base = Rtht2JA = 92 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.02
0.05
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73855.
Document Number: 73855
www.vishay.com
S11-1648-Rev. D, 15-Aug-11
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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