SI4621DY Datasheet, PDF (5/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4621DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
100
0.30
0.25
30
0.20
I_D = 5 A
10
0.15
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.10
T_A = 125 °C
0.05
0.00
0
T_A = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.3
2.2
I_D = 250 µA
2.1
2.0
1.9
1.8
1.7
1.6
1.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Threshold Voltage
50
40
30
20
10
0
10^-2
10^-1
1
10
Time (s)
100 600
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
100 µs
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_DS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73855
www.vishay.com
S11-1648-Rev. D, 15-Aug-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000