SI4621DY Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4621DY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
25
10
V_GS = 10 V thru 6 V
20
8
V_GS = 5 V
15
6
10
V_GS = 4 V
5
V_GS = 3 V
0
0
0.5
1
1.5
2
2.5
3
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
4
T_J = 125 °C
2
T_J = 25 °C
T_J = - 55 °C
0
0
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.30
0.25
0.20
V_GS = 4.5 V
0.15
0.10
0.05
V_GS = 10 V
0.00
0
5
10
15
20
25
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 6.2 A
8
V_DS = 10 V
800
700
600
500
C_iss
400
300
200
C_oss
100
0
0
C_rss
2 4 6 8 10 12 14 16 18 20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V, 5 A
I_D = 5 A
1.4
6
1.2
V_DS = 16 V
4
1.0
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 73855
4
S11-1648-Rev. D, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000