SI4621DY Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET with Schottky Diode

Si4621DY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
- 20
0.054 at V_GS = - 10 V
0.094 at V_GS = - 4.5 V
I_D (A)
6.2
4.7
Q_g (Typ.)
4.5 nC
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
V_f (V)
Diode Forward Voltage
20
0.45 at 1 A
I_F (A)^a
2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT^® Plus Schottky
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices
- Ideal for Boost Circuits
- Ideal for Buck Circuits
A1
A2
S3
G4
SO-8
8^K
7K
6D
5D
Top View
Ordering Information: Si4621DY-T1-E3 (Lead (Pb)-free)
Si4621DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage (MOSFET)
V_DS
Reverse Voltage (Schottky)
V_KA
Gate-Source Voltage (MOSFET)
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C) (MOSFET)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (MOSFET)
I_DM
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
T_C = 25 °C
T_A = 25 °C
I_S
I_F
Pulsed Forward Current (Schottky)
I_FM
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
P_D
T_J, T_stg
Limit
- 20
20
± 20
- 6.2
- 5^a
- 5^{b, c}
- 4^{b, c}
- 25
- 2.6
1.7^{b, c}
2^b
5
3.1
2
2^{b, c}
1.3^{b, c}
2.7
1.7
1.6^{b, c}
1^{b, c}
- 55 to 150
K
A
Unit
V
A
W
°C
Document Number: 73855
www.vishay.com
S11-1648-Rev. D, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000