DG611A_11 Datasheet, PDF (9/15 Pages) Vishay Siliconix – 1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DG611A, DG612A, DG613A
Vishay Siliconix
TEST CIRCUITS
V_S
S
IN
GND
+5V
V+
D
V-
R_L
300 
V_O
C_L
35 pF
Logic
3V
Input
0V
Switch
Input*
V_S
0V
50 %
t_r < 5 ns
t_f < 5 ns
t_OFF
V_O
90 %
90 %
t_ON
- 5V
C_L (includes fixture and stray capacitance)
V_O = V_S
R_L
R_L + r_DS(on)
Note: Logic input waveform is inverted for switches that
have the opposite logic sense control
Figure 1. Switching Time
V_S1
S₁
IN₁
V_S2
S₂
IN₂
GND
+5V
V+
D₁
V_O1
D₂
V_O2
R_L1
300 
C_L1
35 pF
V-
R_L2
300 
C_L2
35 pF
Logic
3V
Input
0V
V_S1
V_O1
Switch
0V
Output
V_S2
V_O2
Switch
0V
Output
50 %
90 %
90 %
t_D
t_D
-5V
C_L (includes fixture and stray capacitance)
Figure 2. Break-Before-Make (DG613A)
+5V
V+
R_g
S
D
V_g
IN
3V
GND
V-
-5V
V_O
C_L
1 nF
V_O
IN_X
OFF
OFF
IN_X
Figure 3. Charge Injection
V_O
ON
OFF
ON
Q = V_O x C_L
OFF
Document Number: 69904
www.vishay.com
S11-1066-Rev. C, 30-May-11
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000