DG611A_11 Datasheet, PDF (10/15 Pages) Vishay Siliconix – 1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DG611A, DG612A, DG613A
Vishay Siliconix
TEST CIRCUITS
+5V
C
V_S
S₁
R_g = 50 
IN₁
0 V, 2.4 V
S₂
NC
V+
D₁
D₂
0 V, 2.4 V
IN₂
GND
V-
C
V_O
X_TALK Isolation = 20 log _VS
C = RF bypass
-5V
Figure 4. Crosstalk
50 
V_O
R_L
V_S
R_g = 50 
0 V, 2.4 V
S
IN
GND
+5V
C
V+
D
V_O
V-
C
R_L
50 
-5V
V_O
Off Isolation = 20 log
V_S
C = RF Bypass
Figure 5. Off-Isolation
+5V
C
V+
S
IN
0 V, 2.4 V
GND
D
V-
C
Meter
HP4192A
Impedance
Analyzer
or Equivalent
-5V
Figure 6. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69904.
www.vishay.com
Document Number: 69904
10
S11-1066-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000