VS-SD823CC Datasheet, PDF (8/11 Pages) Vishay Siliconix – High current capability

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1E4
1E3
1E2
1E1
6
4
2
10 joules per pulse
1
0.8
0.6
0.4
SD823C..S20C Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
tp
d v/ d t = 1000V/ µs
d i/ d t = 300A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
2000 ^{1000 600 400 200 100 50 Hz}
3000
1E3
4000
6000
1E2
1E1
10000
15000
20000
SD823C..S20C Series
Trapezoidal Pulse
TC= 55°C, VRRM = 800V
tp
dv/ d t = 1000V/ us,
di/ dt = 300A/ us
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 31 - Frequency Characteristics
1E4
SD823C..S20C Series
Trapezoidal Pulse
T^J = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
d i/ d t = 100A/ µs
tp
6 ^{10 joules p er pulse}
4
2
1
1E3
0.6
0.4
0.2
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
VS-SD823C..C Series
Vishay Semiconductors
1E4
1000 _{600 400 200 100 50 Hz}
2000
3000
1E3
4000
6000
10000
15000
20000
SD823C..S20C Series
Trapezoidal Pulse
TC= 55°C, VRRM = 800V
tp
d v/ dt = 1000V/ us,
d i/ d t = 100A/ us
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
1E4
0.6
0.4
4 ^{6 10 joulesp er p ulse}
2
1
1E3
0.2
0.1
1E2
1E1
SD823C..S30C Series
Sinusoid al Pulse
TJ = 150°C, VRRM = 800V
tp
d v/ d t = 1000V/ µs
1E2
1E3
Pulse Basewidth (µs)
1E4
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
2000 ^{1000 400 200 100 50 Hz}
3000
4000
6000
10000
15000
20000
SD823C..S30C Series
Sinusoidal Pulse
TC= 55°C, VRRM = 800V
tp
d v/ d t = 1000V/ us
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
Revision: 14-Jan-14
8
Document Number: 93181
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