VS-SD823CC Datasheet, PDF (6/11 Pages) Vishay Siliconix – High current capability

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0.1
SD823C..S20/ S30C Series
VS-SD823C..C Series
Vishay Semiconductors
0.01
0.001
0.001
Steady State Value
R_thJ-hs = 0.076 K/ W
(Single Side Cooled)
R_thJ-hs = 0.038 K/ W
(Double Side Cooled )
(DC Operation)
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 19 - Thermal Impedance Z_thJ-hs Characteristic
100
V_FP
I
80
TJ= 150°C
60
40
T_J= 25°C
20
SD823C..S20C Series
0
0
400 800 1200 1600 2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 20 - Typical Forward Recovery Characteristics
6
SD823C..S20C Series
5.5
T_J= 150 °C; Vr > 100V
5
4.5
I_FM = 1000 A
Sine Pulse
4
500 A
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)
Fig. 22 - Recovery Time Characteristics
100
V_FP
I
80
TJ = 150°C
60
40
TJ= 25°C
20
SD823C..S30C Series
0
0
400 800 1200 1600 2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 21 - Typical Forward Recovery Characteristics
800
I_FM = 1000 A
700
Sine Pulse
600
500
500 A
400
150 A
300
200
SD823C..S20C Series
100
T_J= 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 23 - Recovery Charge Characteristics
Revision: 14-Jan-14
6
Document Number: 93181
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