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| VS-SD823CC Datasheet, PDF (2/11 Pages) Vishay Siliconix – High current capability | |||
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VS-SD823C..C Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current ï
at heatsink temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward, ï
non-repetitive current
IFSM
Maximum I2t for fusing
I2t
Maximum I2ït for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward ï
slope resistance
High level value of forward ï
slope resistance
Maximum forward voltage drop
I2ït
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine waveï
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRMï
reapplied
No voltage
reapplied
100 % VRRMï
reapplied
Sinusoidal half wave,ï
initial TJ = TJ maximum
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum
(I > ï° x IF(AV)), TJ = TJ maximum
SD823C..C
S20
S30
810 (425) 910 (470)
55 (85)
55 (85)
1500
1690
9300
9600
9730
10 050
7820
8070
8190
8450
432
460
395
420
306
326
279
297
4320
4600
1.00
0.95
1.11
1.06
(16.7 % x ï° x IF(AV) < I < ï° x IF(AV)), TJ = TJ maximum 0.80
0.60
(I > ï° x IF(AV)), TJ = TJ maximum
Ipk = 1500 A, TJ = TJ maximum ï
tp = 10 ms sinusoidal wave
0.76
0.57
2.20
1.85
UNITS
A
°C
A
kA2s
kA2ïs
V
mW
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT TJ = 125 °C
CODE
trr AT 25 % IRRM
Ipk
SQUARE dI/dt
Vr
trr AT 25 % IRRM
Qrr
Irr
(μs)
PULSE (A/μs) (V)
(μs)
(μC)
(A)
(A)
S20
2.0
3.5
240
110
1000
50
- 50
S30
3.0
5.0
380
130
IFM
trr
dir
t
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and storage
temperature range
TJ, TStg
Maximum thermal resistance,ï
case junction to heatsink
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
- 40 to 150
°C
0.076
0.038
9800 (1000)
83
B-43
K/W
N (kg)
g
ïRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
UNITS
180°
120°
90°
60°
30°
0.007
0.008
0.010
0.015
0.026
0.007
0.008
0.010
0.015
0.026
0.005
0.008
0.011
0.016
0.026
0.005
0.008
0.011
0.016
0.026
TJ = TJ maximum
K/W
Note
⢠The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DCï
Revision: 14-Jan-14
2
Document Number: 93181
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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