VS-SD823CC Datasheet, PDF (7/11 Pages) Vishay Siliconix – High current capability

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450
400
I_FM = 1000 A
Sine Pulse
350
500 A
300
150 A
250
200
150
100
SD823C..S20C Series
50
T_J= 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
7
6.5
SD823C..S30C Series
T_J= 150 °C; Vr > 100V
6
5.5
I_FM = 1000 A
5
Sine Pulse
500 A
4.5
150 A
4
3.5
3
2.5
2
10
100
1000
Rate Of Fall Of Forward Current - d i/d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
1200
1000
I_FM = 1000 A
Sine Pulse
800
500 A
600
150 A
400
200
SD823C..S30C Series
T_J= 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
VS-SD823C..C Series
Vishay Semiconductors
550
500
I_FM = 1000 A
450
Sine Pulse
500 A
400
350
150 A
300
250
200
150
100
SD823C..S30C Series
50
T_J = 150 °C; Vr > 100V
0
0 50 100 150 200 250 300
Rate Of Fall Of Forward Current - d i/ dt (A/ µs)
Fig. 27 - Recovery Current Characteristics
1E4
10 joulesp er pulse
6
4
2
1
0.6
0.4
1E3
0.2
0.1
0.08
1E2
1E1
SD823C..S20C Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
tp
d v/ dt = 1000V/ µs
1E2
1E3
Pulse Basewidth (µs)
1E4
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
2000 1000
3000
400
200 _{100 50 Hz}
4000
6000
10000
15000
20000
SD823C..S20C Series
Sinusoidal Pulse
TC= 55°C, VRRM = 800V
tp
d v/ d t = 1000V/ us
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
Revision: 14-Jan-14
7
Document Number: 93181
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